Solvent-Induced Degradation of Electrochemically Exfoliated Vanadium Selenide Visualized by Electron Microscopy.

Recently discovered two-dimensional ferromagnetic materials (2DFMs) have rapidly gained much interest in the fields of spintronics and computing, where they may prove powerful tools for miniaturizing devices such as magnetic tunnel junctions and spin-transfer torque memory bits. In addition, heterojunctions and twisted bilayer stacks of such materials may yield exotic spin textures. However, preparation of such devices is complicated by the air sensitivity of many 2DFMs. Here, we report details on the preparation of few-to-monolayer flakes of vanadium selenide (VSe2) using electrochemical exfoliation in propylene carbonate. We also present a detailed study of the effects of air on the structure and magnetic properties of bare and passivated VSe2 after different concentrations of surface passivation treatment. We characterized the microstructure of holes in the VSe2 flakes and the formation of new compounds arising from air exposure, solvent exposure during the exfoliating process, and deliberate electron beam irradiation (sculpting). We sculpt VSe2 flakes while retaining the 1T-VSe2 lattice structure, opening the door for top-down patterned high-resolution 2DFM nanostructures. Additionally, investigation of the magnetic response of nanosheets using magnetic force microscopy (MFM) showed that the oxidation-induced damage only affects the surface fields locally and does not quench large-scale magnetic signal. The findings of this study pave the way toward practical incorporation of 2D ferromagnetic materials in nanoelectronics.

Silicon Nitride Nanopores Formed by Simple Chemical Etching: DNA Translocations and TEM Imaging.

We demonstrate DNA translocations through silicon nitride pores formed by simple chemical etching on glass substrates using microscopic amounts of hydrofluoric acid. DNA translocations and transmission electron microscopy (TEM) prove the fabrication of nanopores and allow their characterization. From ionic measurements on 318 chips, we report the effective pore diameters ranging from zero (pristine membranes) and sub-nm to over 100 nm, within 50 µm diameter membranes. The combination of ionic conductance, DNA current blockades, TEM imaging, and electron energy loss spectroscopy (EELS) provides comprehensive information about the pore area and number, from single to few pores, and pore structure. We also show the formation of thinned membrane regions as precursors of pores. The average pore density, about 5 × 10-4 pores/µm2, allows pore number adjustment statistically (0, 1, or more). This simple and affordable chemical method for making solid-state nanopores accelerates their adoption for DNA sensing and characterization applications.

Mixed-Dimensional 1D/2D van der Waals Heterojunction Diodes and Transistors in the Atomic Limit.

Inverting a semiconducting channel is the basis of all field-effect transistors. In silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs), a gate dielectric mediates this inversion. Access to inversion layers may be granted by interfacing ultrathin low-dimensional semiconductors in heterojunctions to advance device downscaling. Here we demonstrate that monolayer molybdenum disulfide (MoS2) can directly invert a single-walled semiconducting carbon nanotube (SWCNT) transistor channel without the need for a gate dielectric. We fabricate and study this atomically thin one-dimensional/two-dimensional (1D/2D) van der Waals heterojunction and employ it as the gate of a 1D heterojunction field-effect transistor (1D-HFET) channel. Gate control is based on modulating the conductance through the channel by forming a lateral p-n junction within the CNT itself. In addition, we observe a region of operation exhibiting a negative static resistance after significant gate tunneling current passes through the junction. Technology computer-aided design (TCAD) simulations confirm the role of minority carrier drift-diffusion in enabling this behavior. The resulting van der Waals transistor architecture thus has the dual characteristics of both field-effect and tunneling transistors, and it advances the downscaling of heterostructures beyond the limits of dangling bonds and epitaxial constraints faced by III-V semiconductors.

Devices for Nanoscale Guiding of DNA through a 2D Nanopore.

We fabricate on-chip solid-state nanofluidic-2D nanopore systems that can limit the range of motion for DNA in the sensing region of a nanopore. We do so by creating devices containing one or more silicon nitride pores and silicon nitride pillars supporting a 2D pore that orient DNA within a nanopore device to a restricted geometry, yet allow the free motion of ions to maintain a high signal-to-noise ratio. We discuss two concepts with two and three independent electrical connections and corresponding nanopore chip device architectures to achieve this goal in practice. Here, we describe device fabrication and transmission electron microscope (TEM) images, and provide simulated translocations based on the finite element analysis in 3D to demonstrate its merit. In both methods, there is a main 2D nanopore which we refer to as a "sensing" nanopore (monolayer MoS2 in this paper). A secondary layer is either an array of guiding pores sharing the same electrode pair as the sensing pore (Method 1) or a single, independently contacted, guiding pore (Method 2). These pores are constructed parallel to the "sensing" pore and serve as "guiding" elements to stretch and feed DNA into the atomically thin sensing pore. We discuss the practical implementation of these concepts with nanofluidic and Si-based technology, including detailed fabrication steps and challenges involved for DNA applications in solution.